 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET June 2008 FDMA291P tm Single P-Channel 1.8V Specified PowerTrench(R) MOSFET General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features * -6.6 A, -20V. rDS(ON) = 42 m @ VGS = -4.5V rDS(ON) = 58 m @ VGS = -2.5V rDS(ON) = 98 m @ VGS = -1.8V * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant Pin 1 Drain D D G Source Bottom Drain Contact D1 D2 G3 6D 5D 4S D D S MicroFET 2x 2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1a) Units V V A W C -6.6 -24 2.4 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 52 145 C/W Package Marking and Ordering Information Device Marking 291 Device Reel Size 7'' FDMA291P Tape width 8mm Quantity 3000 units (c)2008 Fairchild Semiconductor Corporation FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions ID = -250 A VGS = 0 V, ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 8 V, VGS = 0 V VDS = 0 V Min Typ Max Units -20 -12 -1 100 -0.4 -0.7 3 36 51 79 49 16 1000 190 100 42 58 98 64 -1.0 V mV/C A nA V mV/C m Off Characteristics BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ rDS(on) On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 A VDS = VGS, ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -6.6 A VGS = -2.5 V, ID = -5.1 A VGS = -1.8 V, ID = -3.9 A VGS= -4.5 V, ID = -6.6 A, TJ=125C VDS = -5 V, VDS = -10 V, f = 1.0 MHz ID = -6.6 A V GS = 0 V, gFS Ciss Forward Transconductance Input Capacitance S pF pF pF 23 18 68 40 14 ns ns ns ns nC nC nC -2 A V ns nC Dynamic Characteristics Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS Output Capacitance Reverse Transfer Capacitance (Note 2) Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 13 9 42 25 VDS = -10 V, VGS = -4.5 V ID = -6.6 A, 10 2 3 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -2 A IF = -6.6 A, dIF/dt = 100 A/s VSD trr Qrr (Note 2) -0.8 20 8 -1.2 Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. 2 (a) RJA = 52C/W when mounted on a 1in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 145C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 24 20 -ID, DRAIN CURRENT (A) 16 12 8 4 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) 5 -2.5V 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 VGS = -1.8V -4.0V -3.5V -2.0V -1.8V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V 4 8 12 16 -ID, DRAIN CURRENT (A) 20 24 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -6.6A VGS = -10V ID = -3.3A 1.4 0.12 1.2 0.09 TA = 125 C o 1 0.06 TA = 25oC 0.8 0.03 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 24 VDS = -10V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 0.001 0.0001 VGS = 0V 20 -ID, DRAIN CURRENT (A) TA = -55oC 125oC 16 12 8 4 0 0 1 2 3 -VGS, GATE TO SOURCE VOLTAGE (V) 4 25 C o TA = 125 C 25oC -55oC o 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V Specified PowerTrench(R) MOSFET Typical Characteristics 1600 ID = -6.6A VDS = -5V -15V f = 1MHz VGS = 0 V 10 -VGS, GATE-SOURCE VOLTAGE (V) 8 -10V 6 CAPACITANCE (pF) 1200 Ciss 800 4 2 400 Crss Coss 0 0 4 8 12 16 Qg, GATE CHARGE (nC) 20 24 0 0 4 8 12 16 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 1000 100 -ID, DRAIN CURRENT (A) 10 1 0.1 0.01 RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics. SINGLE PULSE RJA = 145C/W TA = 25C 80 60 10s DC VGS = -10V SINGLE PULSE RJA = 145oC/W TA = 25 C o 40 20 0.001 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 1000 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =145 C/W P(pk) 0.01 SINGLE PULSE 0.1 0.1 0.05 0.02 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA291P Rev B3 FDMA291P Single P-Channel 1.8V specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout FDMA291P Rev. B3 FDMA291P Single P-Channel 1.8 V Specified PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM SyncFETTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production FDMA291P Rev. B3 6 www.fairchildsemi.com |
Price & Availability of FDMA291P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |